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| savantic semiconductor product specification silicon npn power transistors 2SD546 description with to-66 package high breakdown voltage applications converters inverters switching regulators pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 800 v v ceo collector-emitter voltage open base 500 v v ebo emitter-base voltage open collector 6 v i c collector current 1 a p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-66) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD546 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =30ma ;i b =0 500 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 6 v v cesat collector-emitter saturation voltage i c =500ma; i b =100ma 1.0 v v besat base-emitter saturation voltage i c =500ma; i b =100ma 1.5 v i cbo collector cut-off current v cb =800v; i e =0 0.1 ma i ebo emitter cut-off current v eb =6v; i c =0 0.1 ma h fe dc current gain i c =20ma ; v ce =10v 40 200 f t transition frequency i c =0.1a ; v ce =10v 7 mhz savantic semiconductor product specification 3 silicon npn power transistors 2SD546 package outline fig.2 outline dimensions |
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